IGBT and SiC Module Market Research Report

IGBT and SiC Module Market Size


The global IGBT and SiC Module market was valued at US$ 6362 million in 2023 and is anticipated to reach US$ 22910 million by 2030, witnessing a CAGR of 18.5% during the forecast period 2024-2030.

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This report studies the IGBT modules and Silicon Carbide (SiC) Modules.

An IGBT Power Module is a power semiconductor component used in power electronic devices in several industries as they have high-power efficiency, high blocking voltage, and ability to work in low power. An IGBT Power Module is formed by arranging several IGBTs in parallel in a single casing.

Silicon carbide as a semiconductor has a wide band-gap, used in MOSFET it has very low switching losses and therefore allows higher switching frequencies compared to regular silicon devices. At the same time, it can be operated at higher temperatures and at higher voltages compared to traditional Si semiconductors. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

The global key players of IGBT Power Module include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, StarPower Semiconductor, BYD, and Zhuzhou CRRC Times Electric, etc. The global six biggest players hold a share of 77 %.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent in 2022.

This report aims to provide a comprehensive presentation of the global market for IGBT and SiC Module, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding IGBT and SiC Module.

The IGBT and SiC Module market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global IGBT and SiC Module market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.

For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.

The report will help the IGBT and SiC Module manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.

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By Type
• IGBT Modules
• SiC Modules

By Application
• Automotive & EV/HEV
• Industrial Control
• Consumer Appliances
• Wind power, PV, Energy Storage
• Rail Transport
• UPS, Data Center & Server
• Military & Avionics

Key Companies
Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, Hitachi Power Semiconductor Device, Bosch, onsemi, Toshiba, Littelfuse (IXYS), Microchip (Microsemi), STMicroelectronics, Vishay, Denso, SanRex Corporation, Cissoid, StarPower Semiconductor, BYD, Zhuzhou CRRC Times Electric, Hangzhou Silan Microelectronics, MacMic Science & Technology, China Resources Microelectronics Limited, Yangzhou Yangjie Electronic Technology, EcoSemitek, BASiC Semiconductor, SemiQ, GE Aerospace, Guangdong AccoPower Semiconductor, Grecon Semiconductor (Shanghai)

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